| 摘要 |
PURPOSE: To reduce of parasitic capacity and prevent generation of blackening by removing dielectric film on a contact layer, then removing damaged region at the surface and then forming an electrode which is in the ohmic-contact with the contact layer. CONSTITUTION:The upper surface and side surface of contact layer 8 formed like the striped pattern are covered with a dielectric film 10 together with the surface of the lower layer thereof. Next, the resist films 15 and 16 are formed so that the pattern thereof is lower than the other region by a pair of resist films 15 and 16. These resist films 15 and 16 are formed thin to disclose the dielectric film 10 on the contact layer 8 and the damaged region of dielectric film 10 and contact layer 8 is removed. With this process, the dielectric film 10 is closely in contact with the side surface, the striped contact layer 8 is formed without gap and an electrode 11 which is in ohmic contact therewith is formed. Thereby, a semiconductor light-emitting apparatus which assures less parasitic capacitance and no deterioration of characteristic by blackening may he realized. |
