| 摘要 |
PURPOSE:To set the temperature of sintering sufficiently high so that ohmic contact can be improved when a rear metal is formed by a method wherein the surface of a substrate is polished, a metal film is vapor-deposited, a heat treatment is performed, and after the rear metal has been formed, a barrier metal is formed adjoining an epitaxial layer. CONSTITUTION:An epitaxial layer 11 is laminated on the surface of an N<+> type silicon substrate 10, an oxide insulating film 20 is formed thereon, and the rear surface of the substrate 10 is polished to the prescribed thickness. Ni-Ag and the like is vapor-deposited on the whole rear surface of the substrate 10, and a rear metai 30 which is ohmic-contacted to the substrate 10 is obtained by performing a heat treatment. A part of the oxide insulating film 20 on the epitaxial layer 11 is removed using a photolithographic method, an aperture part 21 is formed, an Mo-Ni-Ag metal film 40 is vapordeposited for the purpose of forming a schottky barrier on the surface, and a sintering treatment is performed. Pattern etching is performed on the metal film 40, and the barrier metal 41 of overlay structure is obtained. As the adhesive property is enhanced, the possibility of protrusion of contamination from the overlay part is few even when an etching operation makes progress. |
