| 摘要 |
<p>The reliability and life cycle of a thin-film conductor (16) is predicted accurately and directly by measuring changes in its resistivity during an interval in which its temperature is dynamically increased. A semiconductor wafer (12) containing a number of integrated circuits (18), each of which contains the thin-film conductor (16), is placed on a test platform of a semiconductor test station, where probes (24, 28) are positioned to supply a constant current stress to the conductor (16) and to measure the voltage across it. A ramp current is supplied to a resistive heating element (30) on the test platform to effect a linear rise in temperature over a span of time to the thin-film conductor (16). Changes in the conductor resistivity with respect to temperature provide kinetic data related to electromigration damage in the conductor (16), and hence to reliability over time.</p> |
