| 摘要 |
A self-developing radiation resist has high sensitivity to energetic radiation and is resistant to dry etching. The resist comprises a polymer which is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer is an oxygen heteroatom, linear chain organic polymer having haloalkyl substituents and/or a polymer derived from cyclic ethers; both are adapted to depolymerize in the absence of photo-initiators. For example, azide groups may be incorporated in the polymer by inclusion of m-azidobenzaldehyde with a haloaldehyde and aldehyde, or cyclic ether, in the monomer mixture. The ether may be chloro methyl trioxocane or 1,3 dioxolane. Alternatively, an azido cross-linking agent, e.g. bis azido formate, is added to the polymer resist solution before it is dried on a substrate and exposed. |
