| 摘要 |
PURPOSE:To increase the speed of film formation of a semiconductor thin-film while inhibiting the generation of a flaky decomposition product by arranging a metallic floating member, which is in an electrically neutral state in the clearance of a high-frequency electrode and a shield. CONSTITUTION:In a device in which SiH4 gas as a reaction gas is decomposed in plasma by glow discharge and an amorphous silicon semiconductor thin-film is formed onto a substrate 6 fixed on the lower side of a grounding electrode 2, two metallic floating members 8a and 8b are disposed into the clearance between a high-frequency electrode 3 and a shield 7. These members are spaced 1-0.5mm apart from each other. Accordingly, the deposition of a flaky decomposition product generated in clearance sections is removed while the speed of film formation can be increased by approximately one and a half times. |
