| 摘要 |
PURPOSE:To obtain the semiconductor device having a memory cell which can be integrated in high density by a method wherein a charge storage region is provided on the epitaxial layer located on a single crystal substrate, a cell plate is buried into a groove so that all cells can be made common, and a switching transistor is provided directly above the charge storage region. CONSTITUTION:One electrode 12 of the capacitor of a DRAM memory cell is formed into the N<+> Si single crystal layer on a P<+> Si single crystal substrate 10, the other electrode 13 of said capacitor is formed in the groove provided surrounding the region having an N<+> Si single crystal layer 12 through the intermediary of the oxide film 14 provided on the groove side wall of the N<+> Si single crystal layer 12, said electrode 13 is formed into the common electrode of each memory cell, and the electrode 13 is also used as an element isolation region. Besides, an N<-> Si single crystal layer 15 is provided on the N<+> Si single crystal layer 12, a metal silicide layer 17 is buried at a part of said region, and it is used as a word wire. Moreover, an N<+> semiconductor layer 18 is formed on the upper part of the N<-> Si single crystal layer 15, a bit wire 19 is connected to the N<+> semiconductor layer 18, the N<-> Si single crystal layer 18, and the N<+> Si single crystal layer 12 are operated as the transistor which is controlled by the word wire electrode 17. |
