Photopolymer multilayer structure for the production of a GaAs self aligning double recess.

摘要

Technological process for the production of a GaAs self aligning double recess to be applied to power MESFET devices. The process consists of a first exposure of the planarizing layer to define the length of the first recess, into which the gate is set and is followed by a second exposure of the same photopolymer to define the length of the second recess. The resulting double recess structure, through suitable dimensioning, related to the active channel doping, gives way to high power MESFET devices; in particular it makes possible the application of high source to drain voltages (VDS typically 60 DIVIDED 80 V) to the device before breakdown processes are triggered.