| 摘要 |
PURPOSE:To block a current from between a source and drain when the gate voltage is in an OFF state by a method wherein a light-screening film, which is a high-resistance semiconductor film built of amorphous gallium-arsenic hydride or amorphous silicon-germanium hydride or the like, is provided between a source electrode and drain electrode. CONSTITUTION:A 800-1,000Angstrom -thick film is formed of chromium, nichrome, molybdenum, or the like by spattering or vacuum evaporation. The film is patterned by lithography into a gate electrode 7, which is followed by a process of element isolation. Between a source electrode 2a and drain electrode 2b in this thin-film transistor, there is a light-screening film 4. The light-screening film 4 is built of a film of high-resistance semiconductor, for example of amorphous gallium-arsenic hydride, equipped with conductivity preferably not higher than 10<-8>/omega..cm and optical gap not larger than 1.4eV. The Iight-screen film 4 stops stray light before it lands on an activation layer. The light-screening film 4 itself does not gcnerates any photocurrent or static capacity because it is of high resistance electrically, which suppresses to the minimum a current to flow when the gate is in its OFF state. |
