| 发明名称 |
Method for removing resist. |
| 摘要 |
<p>A method for removing a resist (30) on a layer (29) formed on a semiconductor substrate (21) includes the steps of removing a portion of the resist by plasma processing and removing the remaining resist by a chemical process. This method prevents the entry of heavy metal particles (31) contained in the resist (30) into the semiconductor substrate (21), so that a diffusion region (26) formed in the semiconductor substrate is not contaminated by the heavy metal particles. As a result, destruction of the functional elements formed in the diffusion region is prevented, and thus the minority carrier generation lifetime in the device is not reduced.</p> |
| 申请公布号 |
EP0250092(A1) |
申请公布日期 |
1987.12.23 |
| 申请号 |
EP19870304393 |
申请日期 |
1987.05.18 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
FUJIMURA, SHUZO;KATO, YOSHIKAZU;MOCHIZUKI, SYOUZI |
| 分类号 |
H01L21/3065;H01L21/30;G03F7/42;H01L21/027;H01L21/302;H01L21/31;H01L21/311;H01L21/312;(IPC1-7):H01L21/302;H01L21/82 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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