| 摘要 |
PURPOSE:To reduce the low-level leakage current of SOI-MOSEFT by causing phosphorus to be contained at least in the surface of an insulating substrate. CONSTITUTION:Phosphorus is to be contained in the insulating substrate or in the surface thereof in a SOI semiconductor device. For instance, after forming a polycrystalline Si film by means of a CVD method on the insulating substrate surface which was obtained by driving in phosphorus ions of about 10<12>/cm<2> from the surface of an insulating substrate or a quartz substrate consisting of a quartz substrate containing phosphorus of about 1ppm and by applying oxygen annealing at about 900 deg.C, the polycrystalline Si film is made monocrystalline by means of a laser annealing treatment, and a MOS-TYPE FET is obtained in the monocrystalline Si film. With this, the low-level leakage current of the SOI-MOSFET can be reduced.
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