| 摘要 |
PURPOSE:To prevent disconnections at stepped sections and short circuits in wirings at the time of multilayer interconnections by forming metallic wirings on the flat surface of a semiconductor device in the same height. CONSTITUTION:A field oxide film 35 is shaped in the same height as an N-type silicon semiconductor layer 34 as an active region, surrounding the layer 34. A P<+> type poly-Si layer 39a in a buried and formed base extracting electrode being in contact with the side surface of a P<+> type external base diffusion layer 42 in a base region is shaped into the field oxide film 35. Each metallic electrode 46a-46c for a transistor is formed in the same height, thus flattening the surface of a semiconductor device including the transistor. Accordingly, disconnections at stepped sections and short circuits in upper layer wirings can be prevented on multilayer interconnections.
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