DOPADE POLYKRISTALLINA KISELSKIKT FOR HALVLEDARORGAN

摘要

An improved phosphorus doped polycrystalline silicon layer for semiconductor devices is deposited in the amorphous state by low pressure chemical vapor deposition in an isothermal reactor (Fig 2) from a gas mixture containing an increased amount of phosphine over the amount conventionally used. The gas proportions are 16 x 10<-4> to 17 x 10<-4> parts by volume of phosphine to each part by volume of silane. After deposition the layer is annealed to convert it to the polycrystalline state. A layer formed by this method is characterized by exceptional uniformity of doping, enlarged grain size, significantly increased electrical conductivity and improved radiation hardness in comparison to layers formed by conventional processes.