摘要 |
PURPOSE:To obtain an interconnecting layer having excellent heat resistance and film strength by providing the interconnection layer formed by sequentially providing a bonding layer made of one of Ti, Ta, a barrier layer made of one of Mo and W or Pt, and a main conductor layer on a ceramic substrate. CONSTITUTION:A bonding layer 2 and a barrier layer 3 are formed on a ceramic substrate 1, at least one of Ti and Ta is used as the layer 2, at least one of W and Mo or Pt is used as the layer 3, and a main conductor layer 4 is formed on the layer 3. The thermal expansion coefficients of the layers 2, 3 are similar, and made of metals which are scarcely thermally diffused. Thus, distortion between the layers and thermal diffusion between phases are prevented even under severe heat treating conditions, such as brazing at the time of removing the metal to obtain interconnection layer having excellent heat resistance without discoloring, swelling, exfoliating, nor improper adhesion. |