| 摘要 |
PURPOSE:To further increase a high resistance value of a highresistance element whose thickness and dimensions are limited, by providing oxide films at the ends of a high-resistance member composed of a second polysilicon layer for the purpose of providing additional high-resistance members and constituting the high-resistance element by these high-resistance members. CONSTITUTION:After a first polysilicon layer is patterned on a semiconductor substrate, an insulation film 4 is formed over the entire surface. The insulation film 4 is provided with contact holes 5 on the patterns of the first polysilicon layer 3. When a second polysilicon layer 6 serving as a high-resistance member of a high-resistance element is formed, thin oxide films 10 are also formed on the surface of the first polysilicon layer 3 within the contact holes 5. These thin oxide films 10 serve as additional high-resistance members. Accordingly, a high-resistance element thus obtained is composed of the high-resistance member composed of the second polysilicon layer 6 and of the additional high- resistance members provided by the oxide films 10 formed at the ends thereof. |
