| 摘要 |
PURPOSE:To obtain a conductor having desired conductivity and uniform film quality, in forming a monomolecular built-up film by an LB method, by forming the film under a gaseous phase containing a compound having an electron acceptive property or an electron donating property. CONSTITUTION:A film forming device is arranged in the hermetically sealed system 13 of a film forming apparatus and a film forming molecule group is developed on the surface of water in the water tank of the apparatus and adjustment is performed by a partition plate. Next, the gaseous phase in the hermetically sealed system 13 is substituted with a compound (hereinafter referred to as a dopant) having an electron acceptive property or an electron donating property. As the representative dopant, there are halogen and protonic acid etc. and, at first, a vacuum evacuation device 18 is operated to bring a separate chamber 14 to a pressure reduced vacuum state and, subsequently, for example, gases are introduced into the separate chamber 16 and mixed. Further, a vacuum evacuation device 20 is operated to reduce the pressure of the hermetically sealed system 13 and the gaseous mixture is introduced into said system 13 from the separate chamber 14 to substitute air and a film is formed on a substrate.
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