发明名称 FLAT BASE TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the inductance in a device itself and in a circuit, in a flat base type semiconductor device, by forming the shape of an upper electrode, which constitutes a tightly sealed container wherein a semiconductor element is tightly sealed, in a block shape, and using a nonmagnetic material for a compressing member around the upper electrode. CONSTITUTION:A base 1 is provided as a lower electrode, which is formed so as to contain a semiconductor element 2 and to surround the side surface of the element 2. An electrode block 3 is provided as an upper electrode, which is mounted on the upper surface of the semiconductor element 2 that is contained in the base 1 and constitutes a tightly sealed container for the element 2. The semiconductor element 2, which is held between the electrode block 3 and the base 1, is contacted and compressed with as compressing member 5 comprising a nonmagnetic material, which is coupled in the electrode block 3. Both end parts are sealed by a sealing cap 6, which is formed so as to surround the side surface between the base 1 and the electrode block 3. Thus the semiconductor element 2 is sealed. In this way, the inductance in the device itself and the circuit can be made small.
申请公布号 JPS62286257(A) 申请公布日期 1987.12.12
申请号 JP19860129665 申请日期 1986.06.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 ODATE MITSUO
分类号 H01L23/04;H01L21/52 主分类号 H01L23/04
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