| 摘要 |
PURPOSE:To form an ion implanted region of desired density distribution without using a mask by a method wherein the ions are implanted by changing scanning speed using a microion beam. CONSTITUTION:When ions such as B<+> and the like are implanted into an Si substrate and an ion-implanted region having partially different implantation density, the scanning speed of a beam 6 in x-axis and y-axis is set at VX and VY, and the beam is scanned with VX=variable and VY=constant (a) or VX= constant and VY=variable (b). As a result, density distribution (a) is formed in x-axis direction, and density distribution (b) is formed in y-axis direction. A density distribution can be made in a very small region without using a mask 1 by having the diameter of the ion beam of 1mum or below. |
