| 摘要 |
PURPOSE:To form a high concentration layer of impurity on the surface of a P1 layer by a simple means without disturbing the crystallizability of an element and the impurity concentration distribution of a base layer by placing the P1 layer onto a susceptor coated with a P<+>1 layer, bonding the P<+>1 layer with the P1 layer by the use of an epitaxial growth process and solid growth of the P<+>1 layer. CONSTITUTION:A susceptor 9, which is coated previously with a semiconductor having high P-type impurity concentration and on the surface of which a P<+>1 layer 5 is shaped, is prepared, and a laminate consisting of a P1 layer 2, an N1 layer 1 and a P2 layer 3 is placed onto the susceptor 6 so that the P1 layer 2 and the P<+>1 layer 5 are faced oppositely. The laminate is supplied with the mixed gas of gases such as an SiCl4 gas and a B2H6 gas in the atmosphere of a temperature of 1100 deg.C, thus growing a P<->2 layer 7 composed of a P-type semiconductor having comparatively low concentration onto the P2 layer 3 in an epitaxial manner. The P<+>1 layer 5 coated to the susceptor 6 is bonded with the laminate P1 layer 2 and subjected to solid growth at that time, thus changing the P1 layer 2 into a single crystal. The P<+>1 layer 5 is peeled from the susceptor 6 while phosphorus is diffused selectively to the surface section of the P<->2 layer 7 to form an N<+>2 layer 8 made up of an N-type semiconductor as an emitter layer.
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