发明名称 |
Semiconductor power module |
摘要 |
A semiconductor power module includes at least two mutually parallel ceramic substrates each having two sides, metallizations disposed on at least one side of each of the substrates, at least one controlled semiconductor power component disposed between each two respective substrates and contacted by the metallizations above and below the component, the substrate above the component having at least one hole formed therein above the component for accommodting control connections to the component.
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申请公布号 |
US4710795(A) |
申请公布日期 |
1987.12.01 |
申请号 |
US19850705089 |
申请日期 |
1985.02.25 |
申请人 |
BROWN, BOVERI & CIE AKTIENGESELLSCHAFT |
发明人 |
NIPPERT, GEORG;HAHN, BERTHOLD;GOBRECHT, JENS |
分类号 |
H01L23/498;H01L23/538;H01L25/07;H01L25/18;H02M7/04;(IPC1-7):H01L21/447;H01L23/10;H01L23/40;H01L23/14 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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