发明名称 FORMING METHOD FOR PATTERN
摘要 PURPOSE:To prevent a conductive film interposed between resist films of two layers from charging up due to an electron beam by using a conductive material made of high molecular polycation-TCNQ salt complex for a material for forming the film to form a uniform film having no pinhole. CONSTITUTION:A high molecular polycation-TCNQ salt complex obtained by reacting high molecular polycation with lithium-TCNQ salt is utilized as a layer material to be interposed for discharging storage charge. The salt complex of the polycation and the TCNQ obtained by a Menschutkin reaction is of a conductive polymer compound which can form a uniform film without pinhole in an extremely reduced thickness by a spin coating method and has properties insoluble in a coating solvent of a resist for exposing an electron beam and a developer.
申请公布号 JPS62272528(A) 申请公布日期 1987.11.26
申请号 JP19860116404 申请日期 1986.05.20
申请人 FUJITSU LTD 发明人 KAWASAKI YOKO;YONEDA YASUHIRO;SAITO KAZUMASA
分类号 H01L21/027;G03F1/00;G03F1/54;H01L21/30 主分类号 H01L21/027
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