发明名称 |
FORMING METHOD FOR PATTERN |
摘要 |
PURPOSE:To prevent a conductive film interposed between resist films of two layers from charging up due to an electron beam by using a conductive material made of high molecular polycation-TCNQ salt complex for a material for forming the film to form a uniform film having no pinhole. CONSTITUTION:A high molecular polycation-TCNQ salt complex obtained by reacting high molecular polycation with lithium-TCNQ salt is utilized as a layer material to be interposed for discharging storage charge. The salt complex of the polycation and the TCNQ obtained by a Menschutkin reaction is of a conductive polymer compound which can form a uniform film without pinhole in an extremely reduced thickness by a spin coating method and has properties insoluble in a coating solvent of a resist for exposing an electron beam and a developer. |
申请公布号 |
JPS62272528(A) |
申请公布日期 |
1987.11.26 |
申请号 |
JP19860116404 |
申请日期 |
1986.05.20 |
申请人 |
FUJITSU LTD |
发明人 |
KAWASAKI YOKO;YONEDA YASUHIRO;SAITO KAZUMASA |
分类号 |
H01L21/027;G03F1/00;G03F1/54;H01L21/30 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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