| 摘要 |
PURPOSE:To accurately control the film thickness of an insulating film of silicon by a method wherein, after the unimolecular adsorption of silicon on the surface of a substrate, silicon hydride is adsorbed thereon and this process is repeated several times. CONSTITUTION:The inside of a vessel 2 is evacuated by a vacuum exhaust system 8, a substrate 1 is kept at a temperature of 400 deg.C, and SiF4 is introduced from a pipe 4. Then SiF4 is adsorbed as a unimolecular layer on the substrate 1. The supply of SiF4 is stopped, the inside of the vessel 2 is evacuated, and thereafter SiH4 is introduced from a a pipe 5. Then SiH4 is adsorbed on the substrate 1 covered with SiF4. A surface exchange reaction expressed by a formula of SiF4 + SiH4 2Si + 4HF is conducted. and HF is released into a vapor phase, while Si of a two-atom layer grows on the surface of the substrate 1. This process is repeated several times. By this method, the film thickness of an insulating film of Si is controlled accurately.
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