| 摘要 |
PURPOSE:To prevent the generation of crack in a ceramic thin film due to thermal stress by a method wherein metal thin films consisting of group IVa, Va, VIa metal and having a thermal expansion coefficient approximate to that of the ceramic thin film are formed on the ceramic thin film and metal wiring layers are formed thereon. CONSTITUTION:A ceramic thin film 2 and metal wiring layers 3 differ in thermal expansion coefficient and the formed is 4-10X10<-6>K<-1> and the latter 13-24X10<-6>K<-1>. However, metal thin films 4, which are interposed between the both and consist of group IVa, Va, VIa metal, have a large elastic modulus and the thermal expansion coefficient is 4.5-9X10<-6>K<-1> and is approximate to that of the ceramic thin film 2. Accordingly, by a heat cycle at the time of formation of the metal wiring layers 3 and the time of mounting of a semiconductor element 5 and so on the metal wiring layers 3 or be a heat cycle in a test on the reliability of a completed semiconductor device, the thermal stress that the ceramic thin film 2 receives is reduced. Thereby, the generation of crack in the ceramic thin film 2 can be prevented. |
