发明名称 Transition metal dichalcogenide compounds.
摘要 Novel single layer materials of the form MX2, where MX2 is a layer-type dichalcogenide such as MoS2, TaS2, WS2, or the like, exfoliated by intercalation of an alkali metal, and immersion in water, are disclosed. MoS2 has been exfoliated into monolayers by intercalation with lithium followed by reaction with water. X-ray diffraction analysis demonstrates that the exfoliated MoS2 in suspension is in the form of one-molecule-thick sheets. X-ray patterns from dried and re-stacked films of exfoliated MoS2 indicate that the layers are randomly stacked. By adsorbing monolayers or precipitating clusters of various species such as compounds of Co, Ni, Pb, Cd, Al, Ce, In and Zn, on MoS2 while the sulfide is suspended as single layers and then recrystallizing, a new group of inclusion compounds can be formed. In the re-crystallized or re-stacked materials, the inter-layer spacing can be expanded or contracted compared to MoS2.
申请公布号 EP0245670(A2) 申请公布日期 1987.11.19
申请号 EP19870105659 申请日期 1987.04.16
申请人 SIMON FRASER UNIVERSITY 发明人 MORRISON, S. ROY;FRINDT, ROBERT F.;JOENSEN, PER;GEE, MICHAEL A.
分类号 C01B17/20;C01B19/00;C01G35/00;C01G39/06;C01G41/00;C10M103/06;C10N10/10;C10N10/12;C10N50/08;H01M4/58 主分类号 C01B17/20
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