| 摘要 |
PURPOSE:To contrive simplification of constitution of the title device by a method wherein a drain region, connected to the first electrode of a vertical transfer CCD, is provided and a signal charge is discharged to a substrate by utilyzing the punch-through effect between a drain potential well and the substrate or by connecting the drain region and the substrate. CONSTITUTION:When voltage is applied to a transfer gate electrodes 2 and 4, the signal charge accumulated on a photoelectric conversion part 5 is transferred to the potential well 8 located below the transfer electrodes 2 and 4. Then, when voltages phi4-phi1 are applied successively, the signal charge is transferred in the directions of phi4, phi3, #2 and phi1. The signal charge transferred up to the electrode 2, to be used for transfer, passes under the first electrode 1 and reaches a drain 10. As reversely biased voltage drop is applied to between an n-type substrate 9 and the potential well 8, the signal charge reached the drain 10 is made to flow from the bottom of the drain 10 to the n-type substrate 9 and discharged. |
