| 摘要 |
PURPOSE:To easily detect the end point of etching by equalizing the thickness of an oxide film on the scribing line of a substrate to that of the region of the oxide film to be etched, and simultaneously etching the both. CONSTITUTION:An oxide film 2 having a predetermined thickness is formed on a substrate 1, the film 2 is exposed and developed by using a photomask for an IC, and the film 2 is partly removed by etching in response to the development to form the film 2 of the shape adapted for desired IC component. The thickness of an oxide film 3 on the scribing line of the substrate 1 is equalized to that of the predetermined etching region of the film 2 to simultaneously etch the predetermined etching region and the film 3 on the scribing line, thereby detecting the end point of etching according to the film 3 on the scribing line. Thus, the film 3 on the line can be used for monitoring the end point of etching.
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