发明名称 APPARATUS AND METHOD FOR SURFACE TREATMENT
摘要 PURPOSE:To improve the efficiencies of etching and treatments for improving the quality of surface and purifying the surface, by a method wherein the resin of fluorine or chlorine sputtered easily by ion beams is provided on the surface of a scattering solid body. CONSTITUTION:A polytetrafluoroethylene film is provided as a resin film 6 on the upper layer of the surface of a scattering solid body 3 of silicon. Most of ion beams 2 falling on the resin film 6 on the surface of the scattering solid body are scattered on this resin film 6. On the occasion, atoms and molecules constituting the resin film are sputtered simultaneously and tend to fly toward the surface of a sample. Among sputtered particles falling substantially vertically to the surface of the sample, particles of halogen atoms and halogen compounds react chemically with materials containing Si and Si compounds and metal elements such as Al, W, Mo, Ga and As and constituting the sample, and the product of reaction is vaporized from the surface of the sample and discharged from the apparatus.
申请公布号 JPS62260327(A) 申请公布日期 1987.11.12
申请号 JP19860102028 申请日期 1986.05.06
申请人 HITACHI LTD 发明人 OKUDAIRA SADAYUKI;TAJI SHINICHI;TSUJIMOTO KAZUNORI;MUKAI KIICHIRO
分类号 C23F1/00;H01L21/205;H01L21/302;H01L21/3065;H01L21/31 主分类号 C23F1/00
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