| 摘要 |
PURPOSE:To prevent voids, hillock from generating by providing aluminum or aluminum alloy wirings which contain transition metal element as an adding element. CONSTITUTION:Aluminum or aluminum alloy wirings to which transition metal element is added are provided. A film is formed by a DC or high frequency magnetron sputtering method, and a high frequency bias power is applied to an Si wafer as a substrate. When a bias voltage is set to -150V, voids, hillocks are reduced when Ar amount to be introduced to the film is reduced, but not sufficient. On the contrary, a film and laminated film to which Ti, Ta are uniformly added do not substantially cause void, hillock.
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