发明名称 SUBSTRATE FOR LOADING SEMICONDUCTOR AND MANUFACTURE THEREOF
摘要 PURPOSE:To equalize the thickness of a plating film integrally formed on the inner wall surface of a recessed section for loading a semiconductor by shaping a continuous indented groove around the base of the recessed section. CONSTITUTION:Metallic foils 2 are stuck to the upper and lower surfaces of a substrate 1 consisting of a plastic material. An opening section 3 penetrating up to the back from the surface is shaped to the substrate 1. A metallic plate 4 is joined with the substrate back side of the opening section 3 through an adhesive layer 5 so as to block the opening section 3, thus forming a recessed section 6 for loading a semiconductor. A continuous indented groove 7 is shaped to the base of the recessed section 6, and a plating film 8 is formed integrally on the surfaces of the plastic material 1, the layer 5 and the metallic plate 4 constituting the inner wall of the recessed section 6. Accordingly, since the groove 7 is shaped while the protruding part of adhesives is cut off, the surfaces up to the metallic plate 4 from the substrate 1 are smoothed, thus forming the film 8 having uniform thickness.
申请公布号 JPS62257753(A) 申请公布日期 1987.11.10
申请号 JP19860101569 申请日期 1986.04.30
申请人 IBIDEN CO LTD 发明人 TAKASAKI YOSHINORI;MABUCHI KATSUMI
分类号 H01L23/12;H01L23/13;H05K1/18 主分类号 H01L23/12
代理机构 代理人
主权项
地址