| 摘要 |
PURPOSE:To contrive the improvement in photoelectric conversion characteristics by providing a reflection preventing film on a contact interface between a semiconductor film and a rugged surface of a photodetecting plane electrode film so as to reduce reflection of an incident light on the interface with the semiconductor film and to alleviate steep projections of the rugged surface. CONSTITUTION:A reflection preventing film 3 is composed of an insulating material such as TixOy, Ta2O5, ZnS, and NdxOy, whose light refractive index is larger than about 2.0 of TCO composing a photodetecting plane electrode film 2 and whose light transmitting property is lower than that of a rear semi conductor film 4. As the reflection preventing film 3 is composed of a lighttransmitting insulating material, when its thickness becomes thick, it prevents the movement of the photocarriers generated by photoelectric conver sion in a light active layer in the semiconductor film 4 to the photodetecting plane electrode film 2. Accordingly, its thickness is preferably about 1000 A or under in order to allow the photocarriers to move by utilizing a tunnelling effect. |
