FORMATION OF FINE PATTERN

摘要

PURPOSE:To form a fine pattern easily by a method wherein an amorphous silicon film is deposited by an ECR type plasma deposition utilizing a microwave electron cyclotron resonance between a resist layer and a high reflection coefficient film to be patterned. CONSTITUTION:A high reflection coefficient film 1 which is to be patterned is formed. Then an amorphous silicon film 2 is deposited by an ECR type plasma deposition apparatus which facilitates uniform film deposition at low temperature. Then a resist layer 3 is formed and exposed and developed. Because the low reflection coefficient amorphous silicon film 2 is provided between the high reflection coefficient film 1 and the resist layer 3, the exposure of the resist layer 3 by the reflected light from the film 1 is avoided so that a fine pattern is formed easily.