| 摘要 |
PURPOSE:To attain the normal operation of the titled circuit at a considerably lowered power voltage by forming the 1st and 2nd transistors (TR) constituting a differential amplifier circuit by TRs whose base is formed by a low density active base region. CONSTITUTION:The 1st and 2nd TRs 1, 2 constituting the differential amplifier circuit are formed by a P channel active base region 36 formed on the surface of an island region 35 being a collector, an N<+>-channel emitter region 38 formed on the surface of an active base region 37 and a P-channel base contact region 39 being partly overlapped on the active base region 37. Since bases of the TRs are formed by the low density active base region 36, the current rising characteristic of the emitter-base junction is more excellent than that of a conventional TR and the carrier transportation efficiency at the base is high. Thus, the probability of minority carriers (electrons) injected from the emitter reaching the collector is high even when the collector potential is insufficient. Thus, the circuit is operated normally even at a considerably lowered power voltage.
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