| 摘要 |
The present invention provides a method for fabricating a GaAs single crystal by relying on a floating zone technique in a closed type cylinder charged with a GaAs polycrystal and an adjacently located GaAs single seed crystal, in which: an As container charged with As and communicating with the interior of said cylinder supplies pressurized As vapor into said cylinder, said As container is heated to a temperature sufficient to ensure that an optimum As vapor pressure of PAS ? 2.6 x 106 exp (-1.05eV/kT) Torr is applied to a melt region located at a boundary between said GaAs single seed crystal and said GaAs polycrystal in said cylinder to satisfy stoichiometry of the crystal to be grown, said melt region is heated to a temperature set at or somewhat higher that the melting point of GaAs, a continuous temperature gradient is established in a region of said cylinder leading from said As container to said GaAs polycrystal and to said GaAs single seed crystal. |
