发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To contrive improvement in high frequency characteristics by a method wherein the material, on the surface of which the earthing electrode and the capacity electrode are electrically connected to an earthing conductor with the earthing conductor using the earthing conductor provided as a chip capacitor on the side face of the chip capacitor, is used. CONSTITUTION:An insulated substrate 2 is adhered to an earthing substrate 1, and a semiconductor chip 3 is provided thereon through the intermediary of a conductive film 4. Also, the bonding pads 5 and 6 of the base electrode and the emitter electrode formed on the chip 3 are connected to the earthing electrode 15 and the capacity electrode 11 of the chip capacitor whereon a capacity electrode 9 is connected and fixed to the conductor through the intermediary of bonding wires 7 and 8. At this point, as the electrode 15 is connected to the capacity electrode 9 on the rear through the intermediary of the connection conductor 16 located on the side face of the chip capacitor, the electrode 15 is electrically earthed through the conductor 1. As a result, the workability of bonding can be improved, the line of bonding is made shorter, and excellent high frequency characteristics can be obtained.</p>
申请公布号 JPS62245663(A) 申请公布日期 1987.10.26
申请号 JP19860089301 申请日期 1986.04.17
申请人 NEC CORP 发明人 SUZUKI HIDEO
分类号 H01L25/00;H01L23/12;H01L27/13;H05K1/18 主分类号 H01L25/00
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