| 摘要 |
PURPOSE:To deposit a film having high orientability and uniform quality by feeding an etching gas to a single crystal substrate simultaneously with the deposition of a polycrystalline film on the substrate and by irradiating light energy on the etching gas. CONSTITUTION:A substrate 103 having a crystal orienting surface is set on a support 102 and a deposition chamber 101 is evacuated. Gaseous H2 or the like is introduced into an activation chamber 123, activated and introduced into the film forming chamber 101. Gaseous SiF4 or the like is introduced into an activation chamber 114, activated and introduced into the chamber 101. An etching gas such as F2 or a decomposition product thereof is further introduced into the chamber 101 and the activated species are brought into a chemical reaction by irradiating light energy 118 from a light source 117 to deposit a polycrystalline Si film or the like. At the same time, the gaseous F2 is activated by the irradiation to etch the film simultaneously with deposition. Thus, a polycrystalline Si film or the like having high orientability is formed.
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