| 摘要 |
PURPOSE:To manufacture a semiconductor in which a high performance bipolar transistor and a Schottky diode coexist by matching the guard ring of the diode in a self-aligning manner similarly to the base of a bipolar transistor (graft base), and easily forming it at a desired position by a window opened at an insulating film. CONSTITUTION:Reverse conductivity type N-type impurity is implanted in high density in a P-type silicon substrate 1 to selectively form an N-type buried collector 2. Then, windows are opened in the collector electrode forming regin 6 of a bipolar transistor and the guard ring forming region 7 of a Schottky diode, and the surface of N-type epitaxial layer 3 is exposed in the window. Boron is diffused from P-type conductivity-converted first polycrystalline silicon film 8b to form the guard ring 12 of the diode. Holes are opened in the region in the ring 12 and base.emitter forming regions. Then, an emitter electrode 24 is formed. Further, the diode is formed.
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