| 摘要 |
PURPOSE:To increase forward maximum blocking voltage, to lower a forward voltage drop and to speed up a switching rate by forming an insulated gate type control electrode along a region notched from the same semiconductor surface as a cathode region in the vicinity of the cathode region and setting maximum forward blocking voltage under specific conditions. CONSTITUTION:In structure in which a cathode region and an anode region consisting of mutually opposite conductivity type high impurity density regions are formed and the same conductivity type high resistance region as the cathode region is interposed between the anode region and the cathode region, an insulat ed gate type control electrode is shaped along a region notched from the same semiconductor surface as the cathode region in the vicinity of the cathdoe region. The thickness l1 of the high resistance region between the base of the notched semiconductor region and the anode region is set so as to satisfy formu la when maximum forward blocking voltage VBamax is applied. An anode region and a P-N junction are shaped to one part of the same semiconductor surface as the anode region, and the anode region and a high impurity-density semicon ductor region having a conductivity type opposite to that of the anode region short-circuited through an anode electrode are formed.
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