发明名称 Film forming process
摘要 PCT No. PCT/JP85/00064 Sec. 371 Date Oct. 15, 1985 Sec. 102(e) Date Oct. 15, 1985 PCT Filed Feb. 15, 1985 PCT Pub. No. WO85/03803 PCT Pub. Date Aug. 29, 1985.A process for forming a film, characterized in that, in forming a film by glow discharge decomposition, one or more electrode pair rows each consisting of a plurality of high frequency electrode pairs are arranged in a line and in parallel and substrates are arranged on both sides of said electrode pair row approximately in parallel to the electrode pair row. According to the process, damage of the film due to plasma can be reduced, a shield on the back of the RF electrode is not needed, and a film of a large area can be obtained.
申请公布号 US4701344(A) 申请公布日期 1987.10.20
申请号 US19850800638 申请日期 1985.10.15
申请人 KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA 发明人 TAWADA, YOSHIHISA;TSUGE, KAZUNORI
分类号 H01L31/04;C23C16/509;H01J37/32;H01L21/205;H01L31/20;(IPC1-7):B05D3/06 主分类号 H01L31/04
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