发明名称 |
Method of fabricating Schottky gate-type GaAs field effect transistor |
摘要 |
A method of manufacturing a semiconductor device wherein an insulating film of silicon dioxide is provided on the sidewalls of a gate electrode. This silicon dioxide film is used to define the length of the gate region during formation of the source and drain regions by ion implantation, and to accurately position the gate electrode relative to the source and drain regions.
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申请公布号 |
US4700455(A) |
申请公布日期 |
1987.10.20 |
申请号 |
US19850792825 |
申请日期 |
1985.10.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMADA, KIZASHI;AKIYAMA, TATSUO;KOSHINO, YUTAKA |
分类号 |
H01L21/338;H01L29/812;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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