| 摘要 |
PURPOSE:To contrive the reduction of a capacity among a base, an emitter, and a collector by separating an active region from a collector leading part by use of a damage layer formed by ion implantation. CONSTITUTION:On a GaAs substrate 1, an N<+> GaAs layer 4 as a collector layer, an N<-> GaAs layer 3, a P<+> GaAs layer 2 as a base layer, an N Ga 1-xAlxAs 1 as an emitter layer, and a protective film 12 are grown in order. Next, a base electrode 15 and a collector electrode 16 are formed, after which ion implatation is performed for separating the emitter 1 from a base leading part 14. The purpose of this ion implantation is to reduce a parasitic capacity by forming a damage layer 19. Similarly, ion implantation for separating an active region from a collector leading part 22 is performed. Lastly, an emitter electrode 13 is formed.
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