| 摘要 |
PURPOSE:To facilitate the manufacturing processes of a minute-size heterojunction bipolar transistor remarkably, by forming an emitter electrode on the entire surface of the upper side of an emitter, and exposing a semiconductor material layer forming a base with said emitter electrode as a mask. CONSTITUTION:An emitter electrode 7 is formed by liftoff on an epitaxially formed multilayer structure material used for forming a heterojunction bipolar transistor; or a metal, which is to become an electrode, is formed on the entire surface. Thereafter the electrode 7 is formed by photolithography and etching. Then, with the emitter electrode 7 as a mask, etching is performed, and a semiconductor material layer 4 forming a base is exposed, and an emitter mesa is formed. Thereafter, processes for forming a base mesa, a base electrode and a collector electrode used for manufacturing the heterojunction bipolar transistor in general use are employed.
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