| 摘要 |
PURPOSE:To form a uniform CVD film and reduce the consumption of reactive gas, by transmitting, from a light transmitting equipment, a beam light parallel to the surface of a semiconductor wafer, and passing the beam light and blowing out a belt-shaped flow of reactive gas excited by passing through the periphery of the beam light against a part of the surface of a semiconductor wafer from a blowing outlet. CONSTITUTION:When a CVD film is formed on the whole surface of a wafer 1, reactive gas is blown out from a blowing outlet 6, and a laser beam 3 is sent out into the reactive gas flow from a light transmitting equipment 4. A CVD film is formed by moving the blowing outlet 6 and the light transmitting equipment 4 in parallel to the surface of the wafer 1 at a constant speed, and scanning the surface with the laser beam. During this process, the thickness of the CVD film is changed by the number of scanning cycles. That is, the beam-shaped light is transmitted, a narrow belt-shaped reactive gas flow 5 is blown out from the vertical direction only to a specified position at which the CVD film is actually formed, and the beam scanning is performed to form the CVD film. The width of the belt-shaped gas flow is a little wider than the beam width of the light. Thereby, the reactive gas can be uniformly blown out on the wafer 1, and the uniform CVD film can be formed on the whole surface of the wafer.
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