| 摘要 |
PURPOSE:To enable an element wafer with high resistance layer to be formed easily by a method wherein both mirror ground surfaces of the first and the second semiconductor substrates are brought into contact with each other to be heat-treated at the temperature exceeding 200 deg.C forming them into one body. CONSTITUTION:An n<+> type layer 12 and a diffusion formed thermal oxide film 121 as well as a mirror ground n<+> type Si substrate 13 are prepared on another mirror ground surface of high resistance n<+> type Si substrate 11. These ground surfaces of the substrates are decreased and a thermal oxide film is removed by HF to be washed and dried up using a spinner and then both ground surfaces are bonded to each other in the clean atmosphere not exceeding class l to produce n<->-n<+> wafer by heat-treatment at the temperature around 1000-1200 deg.C. Through these procedures, the n<->high resistance layer not formed by epitaxial process can be formed into sufficiently high resistance layer moreover to be ground after bonding process so that the thickness of n<-> type layer may be easily set up at specified value.
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