| 摘要 |
PURPOSE:To reform a semiconductor of a large area with good productivity by applying light and a microwave to the semiconductor simultaneously. CONSTITUTION:A substrate 2 is heated by a heater 1 to a predetermined temperature and light 4 and a microwave 6 are applied to a semiconductor film 3 formed on the substrate 2 simultaneously for a predetermined period. With this process, the semiconductor can be polycrystalline or the polycrystalline semiconductor can be single crystallized. As the microwave applied to the Semiconductor is absorbed by free electrons and free positive holes, it does not reach the substrate and does not increase the temperature of the substrate. Therefore, selectivity of the materiel of the substrate by which the semiconductor is supported is widened significantly. Moreover, uniform recrystallization over the applied surface of the large area semiconductor can be realized.
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