| 摘要 |
<p>A semiconductor device including interconnection lines for connecting element regions is disclosed. Each of interconnection lines is comprised of a first layer consisting essentially of aluminum, an alumina film formed on the first layer and a second layer containing silicon and deposited on the alumina film. Refractory metal silicide such as tungsten silicide, molybdenum silicide, titanium silicide, tantalum silicide and chromium silicide is favorably employed as the second layer. Hillcock formation and electromigration are thus prevented or suppressed.</p> |
