| 摘要 |
PURPOSE:To obtain a solid image sensor having uniform photosensitivity, which is suitable for electronic still cameras, by forming semiconductor layers composing transfer channels in a manner their potentials become deeper from the part under transfer electrodes toward line-direction registers and arranging a storing part of signal changes between said transfer channels and registers. CONSTITUTION:On a P-type semiconductor substrate 40, a P semiconductor layer 46 which is to be a channel stop is arranged and transfer channels consisting of N-type semiconductor layers 47(47a, ...) 49(49a, ...) are formed in a photosensitive part. P semiconductor layer 50(50a, ...) is formed on the layer 49 and an insulating film 51 is formed over the entire surface. Above the layers 47 and 48(48a, ...), transfer electordes 44(44a, ...) are arranged in picture element parts and transfer electrodes 41-43, 45(45a, ...) are arranged in horizontal charge transfer type shift registers. The depth of wells under the layers 47-49 are made deeper from the part under the transfer electrodes 41-43, 45 toward the line-direction registers, and from the part under the transfer electrodes 41-46, 45 toward the part under the part not covered with the transfer electrodes 41-43, 45. By irradiation with light, signal charges QS1-QsS are stored in the wells under the layers 47 and 49. |
