| 摘要 |
PURPOSE:To form an enzyme immobilized membrane flat, by inclining the end face of a photoresist surrounding the surface of a semiconductor enzyme immobilized membrane FE type ion sensor (ISFET) to the surface thereof. CONSTITUTION:A silicon layer on the surface of a sapphire substrate 31 is used to form an ISFET and a photoresist layer 36 is applied on the surface of a wafer with gold evaporated on the back of the sapphire substrate 31. Then, an exposure and development of the work is performed. Thereafter, gamma-aminopropyl triethoxysilane is bonded to the surface of the ISFET to be provided with an enzyme immobilized membrane 38. Then, a protein solution containing enzyme and a cross linking agent is applied thereon to from the membrane 38. The water with the membrane 38 being formed is immersed into acetone to peel the membrane 38 off the photoresist layer 36. As a result, only the membrane 38 formed on the ISFET is left on the wafer. |
