| 摘要 |
PURPOSE:To prevent unevenness from being formed on a sputtered film by means of the cause of abnormal discharge due to fall of a material stuck on the surface of a shield plate onto a target by regulating the position of the surface of the target in a device for sputtering to same height as the top surface of the shield plate of the circumference thereof or to the height higher than it. CONSTITUTION:The position of the surface of a target 31 for sputtering in a device for sputtering is regulated so that it is made higher by about several mm than the top surface of a shield plate 18 of the circumference thereof. Since the shield plate 18 is made lower in this structure, vapor of the target evaporated from the target is difficult to be stuck, and if tentatively stuck, the face of the target 31 is higher and therefore it is prevented that unevenness is formed on the sputtered film by generating abnormal discharge by means of fall of a material stuck on the shield plate 18 onto the surface of the target, scattering and sticking the fallen substance as a granule of 2-3mum on a vapor- deposited base plate, and reduction of yield for the sputtered film can be prevented. |
