| 摘要 |
PURPOSE:To obtain a good insulating film in short time, by stagedly trolling temperature of a substrate under a depressurized atmosphere in the range from room temperature to specific one so that resin is solidified. CONSTITUTION:A substrate 1 is spin-coated with silylated polymethylsilsesquioxane (PMSS) of silicone resin. This spin-coating is done by spin-coating the semiconductor substrate, on a spinner, with PMSS dissolved in an organic solvent. Then, the substrate 1 is mounted in a device. This device enables temperature of the substrate 1 to be controlled in the range from room temperature to 450 deg.C, generating plasma. After the substrate 1 being mounted there, the device is vacuumized swiftly. At a time A kept at 300 deg.C-350 deg.C, nitrogen gas is introduced to control the gaseous pressure in 0.01-10Torr, and at a time B, high frequency electric power is impressed to generate plasma so that the resin coating on the substrate 1 is stricken by the plasma to become solid in short time.
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