| 摘要 |
PURPOSE:To improve bubble transfer characteristics by removing the surface part of an insulating layer between layers which swells because of a conductor pattern and flattening a soft magnetic pattern. CONSTITUTION:An insulating layer 2, the conductor pattern 3, and the interlayer insulating layer 3 are laminated on a bubble crystal layer 1 and a swelling part 6 is exposed to form resist 7. Then, plasma etching is performed by a parallel flat plate type dry etching device to remove the swelling part 6 and flatten the interlayer insulating layer 4, and then resist 7 is removed by ashing. Then, a 'Permalloy(R)' pattern 5 is formed on the surface of the interlayer insulating layer 4 to obtain a chip with improved operation margin characteristics. Consequently, the operation margin characteristics at the intersection part of the conductor patterns are widened and the operation margin characteristics at a nonintersection part become nearly equal, so that a high- density bubble memory with a wide operation margin is realized.
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