| 摘要 |
PURPOSE:To improve the forming yield and the reliability of a thin film transistor by forming a resist pattern inclined at an edge, plasma etching it by using the pattern, and forming a gate electrode inclined at its edge to suppress an insulation damage due to the concentration of an electric field. CONSTITUTION:The resist pattern of a gate electrode is formed in a shape that the edge is inclined, plasma-etched to form a gate electrode inclined at its edge. Even if a plasma etching is performed at the resist without inclination, an inclining angle of tan<-1> of etching ratio is obtained, and thus the gate electrode of low inclining angle can be formed with good reproducibility. That is, even if an electric field is applied among a source electrode 7, a drain electrode 8 and a gate electrode 12 by providing the electrode 12 slowly inclined, the concentration of the electric field is alleviated. Thus, it can prevent dielectric breakdowns. |
